Calculation of electronic properties in AlxGa1-x delta-doped systems
نویسندگان
چکیده
The calculation of the electronic energy levels of n-type d-doped quantum wells in a AlGaAs matrix is presented. Many-body effects in the two-dimensional electron gas are taken into account by using a local-density Thomas-Fermi approach. Special consideration is taken into when the values of the Al molar fraction xR0.45, and the ternary alloy becomes an indirect gap material. The results suggest that in this case the AlxGa1KxAs can support two-dimensional conduction channels associated to the delta-doping, with carrier densities exceeding 10 cm. q 2005 Elsevier Ltd. All rights reserved.
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عنوان ژورنال:
- Microelectronics Journal
دوره 36 شماره
صفحات -
تاریخ انتشار 2005